TRANSISTOR STP4N100

TRANSISTOR STP4N100 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage |Vds|: 1000 V Maximum Drain Current |Id|: 4 A Maximum Junction Temperature (Tj): 150 °C Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm Package: TO220